2004. 11. 22 1/2 semiconductor technical data ktd2686 epitaxial planar npn transistor revision no : 1 darlington transistor. solenoid driver. motor driver. features h high dc current gain : h fe =2000(min.) (v ce =2v, i c =1a) maximum ratings (ta=25 ? ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =45v, i e =0 - - 10 a i ceo v ce =45v, i b =0 - - 10 a emitter cut-off current i ebo v eb =8v, i c =0 0.8 - 4 ma collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 50 60 70 v dc current gain h fe v ce =2v, i c =1a 2000 - - collector-emitter saturation voltage v ce(sat) 1 i c =0.5a, i b =1ma - - 1.2 v v ce(sat) 2 i c =1a, i b =1ma - - 1.5 base-emitter saturation voltage v be(sat) i c =1a, i b =1ma - - 2.0 v switching time turn on time t on cc 20 s 5v 0v 1% duty cycle < = v =30v 30 ? input output - 0.4 - s storage time t stg - 4.0 - fall time t f - 0.6 - a 2 type name lot no. marking characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 60 ? 10 v emitter-base voltage v ebo 8 v collector current dc i c 1 a pulse i cp 3 base current i b 0.5 a collector power dissipation t=10s p c * 2.5 w dc 1 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? * pc : package mounted on fr4 board (cu area : 645 [ , glass epoxy, t=1.6 x ) collector base emitter 5k ? 300 ? ? ? equivalent circuit
2004. 11. 22 2/2 ktd2686 revision no : 1 ce collector emitter voltage v (v) collector current i (a) 0 0 0.8 1.6 c 2.4 3.2 4 i - v cce 268 v =2v ce 0.1 voltage v (v) 1 0.3 0.5 5 3 ce(sat) 10 collector current i (a) 0.5 0.3 1 3 c 510 v - i ce(sat) c collector emitter saturation ta=100 c common emitter ta=25 c be base emitter voltage v (v) collector current i (a) 0 0 0.8 1.6 c 2.4 3.2 1.6 i - v cbe 0.8 2.4 3.2 common emitter dc current gain h fe 0.03 collector current i (a) c h - i fe c 0.05 0.1 0.3 0.5 100 300 500 1000 3000 5000 10000 1 3 5 10 v =2v ce common emitter i /i =500 cb common emitter 0.1 voltage v (v) 1 0.3 0.5 5 3 be(sat) 10 collector current i (a) 0.5 0.3 1 3 c 510 v - i be(sat) c collector emitter saturation i /i =500 cb common emitter collector current i (a) 0.1 collector emitter voltage v (v) ce c 110 0.01 0.1 1 (* single nonrepetitive pulse ta=25 c ) curves must be derated linearly with increase in temperature mounted on fr4 board (cu area : 645 mm , glass epoxy, t=1.6mm) safe operating area 100 10 i max(pulse) c dc operation 2 *1 0ms i =0.18ma b 3 0.22 0.3 0.5 1 0.20 ta=100 c ta=-55 c ta=55 c ta=25 c ta=-55 c ta=25 c ta=-55 c ta=100 c ta=25 c ta=100 c ta=25 c *1 ms i max(continuous) c
|
